Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

被引：164

作者：

Iwata, K ^{[1
]}

Fons, P ^{[1
]}

Yamada, A ^{[1
]}

Matsubara, K ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

ZnO; zinc oxide; N-doping; MBE; PL; exciton;

D O I：

10.1016/S0022-0248(99)00613-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O-2 and N-2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N-2/O-2 flow ratios induced growth ta ins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N-2/O-2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1 x 10(19) cm(-3). However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：526 / 531

页数：6

共 12 条

[1] Optically pumped lasing of ZnO at room temperature [J].