Growth of high-quality epitaxial ZnO films on α-Al2O3

被引：173

作者：

Fons, P ^{[1
]}

Iwata, K ^{[1
]}

Niki, S ^{[1
]}

Yamada, A ^{[1
]}

Matsubara, K ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

ZnO epitaxial films; molecular beam epitaxy; sapphire(0001);

D O I：

10.1016/S0022-0248(98)01427-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO epitaxial thin films have been grown on sapphire(0001) substrates by molecular beam epitaxy using elemental zinc and oxygen supplied by an RF radical source. Despite the large lattice mismatch between ZnO and the underlying sapphire substrate, ZnO layers with (0002) rocking curve half-widths of similar to 12 arcsec have been grown. X-ray reciprocal lattice scans along the [0001] direction show strong Pendellosung fringes indicating the presence of an extremely flat interface and surface as was confirmed by atomic force microscopy experiments. X-ray pole figure measurements indicate that the a-axis of the epilayer was rotated with respect to the a-axis of the substrate by 30 degrees. Preliminary photoluminescence measurements indicate predominant near-bandedge emission. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：627 / 632

页数：6

共 12 条

[1] On exciton luminescence of ZnO/Al2O3 epitaxial thin films [J].