Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

被引：32

作者：

Bayerl, MW

Brandt, MS ^{[1
]}

Ambacher, O

Stutzmann, M

Glaser, ER

Henry, RL

Wickenden, AE

Koleske, DD

Suski, T

Grzegory, I

Porowski, S

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.63.125203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report photoluminescence (PL) and optically detected magnetic resonance (ODMR) measurements on magnesium-doped GaN samples grown by metal-organic chemical vapor deposition, molecular beam epitaxy, and high-pressure-high-temperature synthesis. The samples exhibit at least three luminescence bands in the red-to-infrared spectral range with maxima at approximate to1.75, approximate to1.55, and below 1.4 eV. ODMR on these emission bands reveals two deep defects with isotropic g values of 2.001 and 2.006 and linewidths of 4-5 and 18-32 mT, respectively. Spectrally resolved ODMR experiments suggest that a donor-to-deep defect recombination is responsible for the transitions at 1.75 eV, while an acceptor-to-deep defect transition causes the PL bands with lower energy. The deep centers involved are attributed to defects with energy levels in the lower part of the band gap but close to the midgap region.

引用

页数：9

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