Optical detection of electron paramagnetic resonance in electron-irradiated GaN

被引:60
作者
Bozdog, C
Przybylinska, H
Watkins, GD
Härle, V
Scholz, F
Mayer, M
Kamp, M
Molnar, RJ
Wickenden, AE
Koleske, DD
Henry, RL
机构
[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
[3] Univ Ulm, Abt Optoelekt, D-89081 Ulm, Germany
[4] MIT, Lincoln Lab, Lexington, MA 02173 USA
[5] USN, Res Lab, Code 6861, Washington, DC 20375 USA
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 19期
关键词
D O I
10.1103/PhysRevB.59.12479
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
2.5 MeV electron irradiation of wurtzite GaN epitaxially grown on sapphire substrates greatly reduces its near-UV and visible luminescence, producing two bands in the near infrared. In one of these, a broad structureless band centered at similar to 0.95 eV, three optically detected S = 1/2 electron paramagnetic resonances (ODEPR) are observed. Two of these display well-resolved hyperfine interaction with a single Ga nucleus, suggesting that they are interstitial-Ga related. The second band has a sharp zero-phonon line at 0.88 eV End accompanying phonon-assisted structure and reveals an S = 1 ODEPR signal, as yet not identified. [S0163-1829(99)05719-7].
引用
收藏
页码:12479 / 12486
页数:8
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