Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the Op donor in GaP

A striking similarity has been found between the 0.88-eV photoluminescence (PL) in GaN and the 0.841-eV PL from the substitutional O-p donor in GaP. The major localized phonons, regarded as characteristic for local vibrations involving O-p in GaP, are replicated in the 0.88-eV PL in GaN. This suggests that the 0.88-eV PL can originate from the electronic transition related to the substitutional O-N donor in GaN, either the isolated O-N or a complex involving O-N Within the first model, the isolated O-N in GaN could be a deep donor and therefore could not be responsible for the residual n-type conductivity. [S0163-1829(98)52044-9].