Pressure induced deep gap state of oxygen in GaN

被引：211

作者：

Wetzel, C

Suski, T

Ager, JW

Weber, ER

Haller, EE

Fischer, S

Meyer, BK

Molnar, RJ

Perlin, P

机构：

[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,BERKELEY,CA 94720

[3] UNIV GIESSEN,INST PHYS 1,D-35392 GIESSEN,GERMANY

[4] MIT,LINCOLN LAB,DIV SOLID STATE,LEXINGTON,MA 02173

[5] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.78.3923

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

O and Si donors in GaN are studied by Raman spectroscopy under hydrostatic pressure p. The ground state of O is found to transfer from a shallow level to a deep gap state at p >20 GPa reminiscent of DX centers in GaAs. Transferred to AlxGa1-xN we predict that O induces a deep gap state for x >0.40. In GaN:Si no such state is induced up to the highest pressure obtained (p=25 GPa) equivalent to x=0.56 in AlxGa1-xN and possibly higher. We attribute this distinction to the lattice sites of the dopants. O substituting for N is found to be the origin of high free electron concentration in bulk GaN crystals.

引用

页码：3923 / 3926

页数：4

共 28 条

[1] QUALITATIVE-ANALYSIS OF THIN GALLIUM NITRIDE FILMS WITH SECONDARY ION MASS-SPECTROMETRY [J].