RAMAN-SCATTERING FROM LO PHONON-PLASMON COUPLED MODES IN GALLIUM NITRIDE

被引：365

作者：

KOZAWA, T ^{[1
]}

KACHI, T ^{[1
]}

KANO, H ^{[1
]}

TAGA, Y ^{[1
]}

HASHIMOTO, M ^{[1
]}

KOIDE, N ^{[1
]}

MANABE, K ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD,AICHI 452,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.356492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra of n-type gallium nitride with different carrier concentrations have been measured. The LO phonon band shifted towards the high-frequency side and broadened with an increase in carrier concentration. Results showed that the LO phonon was coupled to the overdamped plasmon in gallium nitride. The carrier concentrations and damping constants were determined by line-shape fitting of the coupled modes and compared to values obtained from Hall measurements. The carrier concentrations obtained from the two methods agree well. As a result, the dominant scattering mechanisms in gallium nitride are deformation-potential and electro-optic mechanisms.

引用

页码：1098 / 1101

页数：4

共 23 条

[1] COUPLED PLASMON-LO PHONON MODES AND LINDHARD-MERMIN DIELECTRIC FUNCTION OF N-GAAS
ABSTREITER, G
TROMMER, R
CARDONA, M
PINCZUK, A
[J]. SOLID STATE COMMUNICATIONS, 1979, 30 (11) : 703 - 707
[2] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS
ABSTREITER, G
BAUSER, E
FISCHER, A
PLOOG, K
[J]. APPLIED PHYSICS, 1978, 16 (04): : 345 - 352
[3] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE
AKASAKI, I
AMANO, H
KOIDE, Y
HIRAMATSU, K
SAWAKI, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) : 209 - 219
[4] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE
AMANO, H
AKASAKI, I
HIRAMATSU, K
KOIDE, N
SAWAKI, N
[J]. THIN SOLID FILMS, 1988, 163 : 415 - 420
[5] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[6] RAMAN-STUDY OF THE PHONON HALFWIDTHS AND THE PHONON PLASMON COUPLING IN ZNO
BAIRAMOV, BH
HEINRICH, A
IRMER, G
TOPOROV, VV
ZIEGLER, E
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (01): : 227 - 234
[7] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN
BARKER, AS
ILEGEMS, M
[J]. PHYSICAL REVIEW B, 1973, 7 (02): : 743 - 750
[8] REFRACTIVE INDEX OF GAN
EJDER, E
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02): : 445 - &
[9] MIXING OF VISIBLE AND NEAR-RESONANCE INFRARED LIGHT IN GAP
FAUST, WL
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (25) : 1265 - &
[10] Hon D. T., 1973, Applied Physics, V1, P241, DOI 10.1007/BF00889771

← 1 2 3 →