Photoluminescence of GaN: Effect of electron irradiation

被引：56

作者：

Buyanova, IA ^{[1
]}

Wagner, M

Chen, WM

Monemar, B

Lindstrom, JL

Amano, H

Akasaki, I

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Swedish Def Res Estab, S-58111 Linkoping, Sweden

[3] Meijo Univ, Dept Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of electron irradiation on the optical properties of GaN material with various electrical conductivity (i.e., n type, compensated, and p type) is studied in detail by photoluminescence (PL) spectroscopy. Electron irradiation with a dose <10(17) cm(-2) is found to have a minor effect on photoluminescence, indicating a high radiation resistance of GaN. For higher doses, two major effects of electron irradiation on PL properties can be distinguished, i.e., radiation- induced quenching of the PL, likely caused by a radiation- induced formation of competing recombination channels, and radiation- induced formation/activation of new optically active centers. (C) 1998 American Institute of Physics. [S0003-6951(98)02246-3].

引用

页码：2968 / 2970

页数：3

共 16 条

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