Excitation density dependence of photoluminescence in GaN:Mg

被引：96

作者：

Oh, E ^{[1
]}

Park, H ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally undoped samples the intensity ratio of a donor-bound exciton line and a donor-acceptor pair line changes dramatically with excitation density due to the limited number of accepters. (C) 1998 American Institute of Physics.

引用

页码：70 / 72

页数：3

共 30 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE
AMANO, H
KITOH, M
HIRAMATSU, K
AKASAKI, I
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) : 1639 - 1641
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] BAUME P, 1995, APPL PHYS LETT, V67, P1914, DOI 10.1063/1.114566
[4] Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes
Casey, HC
Muth, J
Krishnankutty, S
Zavada, JM
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (20) : 2867 - 2869
[5] Efros A. L., 1984, ELECT PROPERTIES DOP
[6] ON P-TYPE DOPING IN GAN-ACCEPTOR BINDING-ENERGIES
FISCHER, S
WETZEL, C
HALLER, EE
MEYER, BK
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1298 - 1300
[7] Gotz W, 1996, APPL PHYS LETT, V68, P667, DOI 10.1063/1.116503
[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS
HALPERIN, BI
LAX, M
[J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +
[9] NEW RED PAIR LUMINESCENCE FROM GAP
HENRY, CH
DEAN, PJ
CUTHBERT, JD
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 754 - &
[10] AN OPTICAL METHOD FOR EVALUATION OF THE NET ACCEPTOR CONCENTRATION IN P-TYPE ZNSE
HU, B
YIN, A
KARCZEWSKI, G
LUO, H
SHORT, SW
SAMARTH, N
DOBROWOLSKA, M
FURDYNA, JK
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 4153 - 4157

← 1 2 3 →