GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE

Growth and luminescence properties of Mg-doped GaN prepared by metal-organic vapor phase epitaxy, in which Cp2Mg or MCp2Mg is used as the Mg source gas, are reported for the first time. It was found that the Mg concentration in GaN is proportional to the flow rate of the Mg source gas; the doping efficiency of Mg into GaN is independent of the substrate temperature from 850° to 1040°C; and Mg in GaN acts as an acceptor and forms blue luminescence centers. By using GaN:Mg/GaN, an efficient near-UV and blue LED can be fabricated. © 1990, The Electrochemical Society, Inc. All rights reserved.