The regulation of defect concentrations by means of separation layer in wide-band II-VI compounds

被引：14

作者：

Butkhuzi, TV

Sharvashidze, MM

Gamkrelidze, NM

Gelovani, KV

Khulordava, TG

Kekelidze, NP

Kekelidze, EE

机构：

[1] Tbilisi State Univ, Lab Semicond Mat, GE-380028 Tbilisi, Georgia

[2] Tbilisi State Univ, Lab Chem Kinet, GE-380028 Tbilisi, Georgia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 07期

关键词：

Carrier concentration - Diffusion - Electric conductivity - Ion implantation - Semiconducting zinc compounds - Stoichiometry;

D O I：

10.1088/0268-1242/16/7/308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The inversion of conductivity in II-VI binary compounds is possible by separating layers (gold and semiconducting layers). P-type (ZnS) and high ohmic n-type (ZnO) samples are obtained by using a gold separating layer. By using a semiconducting ZnO layer as the separating layer it is possible to regulate the relative concentration of components in the base crystal of newly grown layers. This made it possible to obtain stoichiometric n-type and also p-type ZnO and ZnS monocrystal layers.

引用

页码：575 / 580

页数：6

共 11 条

[1] OPTICAL AND ELECTRICAL-PROPERTIES OF RADICAL BEAM GETTERING EPITAXY GROWN N-TYPE AND P-TYPE ZNO SINGLE-CRYSTALS [J].

BUTKHUZI, TV ;

BUREYEV, AV ;

GEORGOBIANI, AN ;

KEKELIDZE, NP ;

KHULORDAVA, TG .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :366-369

[2] BLUE-LIGHT EMITTING DIODES ON THE BASE OF ZNSE SINGLE-CRYSTALS [J].

BUTKHUZI, TV ;

GEORGOBIANI, AN ;

ELTAZAROV, BT ;

KHULORDAVA, TG ;

KOTLJAREVSKY, MB .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :1055-1058

[3] The problem of conductivity-type inversion in wide band gap II-VI compounds [J].

Butkhuzi, TV ;

Tsekvava, BE ;

Kekelidze, NP ;

Chikoidze, EG ;

Khulordava, TG ;

Sharvashidze, MM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (20) :2683-2686

[4] Method of radical beam epitaxy [J].

Butkhuzi, TV ;

Kekelidze, NP ;

Peikrishvili, DN ;

Chikoidze, EG ;

Trapaidze, LT ;

Sharvashidze, MM .

EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 :53-57

[5] Exciton photoluminescence of hexagonal ZnO [J].

Butkhuzi, TV ;

Chelidze, TG ;

Georgobiani, AN ;

Jashiashvili, DL ;

Khulordava, TG ;

Tsekvava, BE .

PHYSICAL REVIEW B, 1998, 58 (16) :10692-10695

[6]

BUTKHUZI TV, 1999, 1999 INT WORKSH ZINC, P36

[7]

BUTKHUZI TV, 1999, INT WORKSH ZINC OX D, P35

[8]

FOK MV, 1972, LUMINESCENCE NONLINE, V59

[9]

GORELIK SS, METALL, V197, P280

[10]

ISHIBASHI A, 1996, 23 INT C PHYS SEM BE, V4, P3155

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