Quenching of the quantum Hall effect in multilayered epitaxial graphene: The role of undoped planes

被引：13

作者：

Darancet, Pierre ^{[1
]}

Wipf, Nicolas ^{[1
]}

Berger, Claire ^{[1
,2
]}

de Heer, Walt A. ^{[2
]}

Mayou, Didier ^{[1
]}

机构：

[1] CNRS UJF, Inst Neel, F-38042 Grenoble 9, France

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.101.116806

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a mechanism for the quenching of the Shubnikov-de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, i.e., it can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene n=0 Landau level of the uncharged layers which is pinned at the Fermi level. We find that the coupling between this n=0 Landau level and the conducting states of the doped plane leads to a scattering mechanism having the right magnitude to explain the experimental data.

引用

页数：4

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