Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene

被引：713

作者：

Hass, J. ^{[1
]}

Varchon, F. ^{[2
]}

Millan-Otoya, J. E. ^{[1
]}

Sprinkle, M. ^{[1
]}

Sharma, N. ^{[1
]}

De Heer, W. A. ^{[1
]}

Berger, C. ^{[1
,2
]}

First, P. N. ^{[1
]}

Magaud, L. ^{[2
]}

Conrad, E. H. ^{[1
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

[2] CNRS, UJF, Inst Neel, F-38042 Grenoble 9, France

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.100.125504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show experimentally that multilayer graphene grown on the carbon terminated SiC(000 (1) over bar) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via first-principles calculation, we demonstrate that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point. This explains prior experimental results that showed single-layer electronic properties, even for epitaxial graphene films tens of layers thick.

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