Epitaxial Y-stabilized ZrO2 films on silicon:: Dynamic growth process and interface structure

We have studied the initial stage of the growth of yttria-stabilized zirconia (YSZ) films on natively oxidized (100) Si wafer by pulsed-laser deposition. X-ray photoelectron spectroscopy and high-resolution electron microscopy show that, for the first few monolayers of crystalline YSZ deposited on (100) Si, the dynamic processes appear to be the decomposition of SiO2 to SiO, the formation of ZrO2, and the desorption of SiO. The native amorphous SiO2 layer is removed completely with the continued deposition of YSZ. The atomically sharp and commensurate YSZ/Si interface is suggested to have a sequence of Si-Si-O-Zr-O-. (C) 2002 American Institute of Physics.