Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions

被引：180

作者：

Chambers, SA ^{[1
]}

Liang, Y

Yu, Z

Droopad, R

Ramdani, J

Eisenbeiser, K

机构：

[1] Pacific NW Natl Lab, Environm Mol Sci Lab, Richland, WA 99352 USA

[2] Motorola Labs, Phys Sci Res Labs, Tempe, AZ USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.1310209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. (C) 2000 American Institute of Physics. [S0003-6951(00)05337-7].

引用

页码：1662 / 1664

页数：3

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