Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve

被引:84
作者
Jiang, Y [1 ]
Abe, S
Ochiai, T
Nozaki, T
Hirohata, A
Tezuka, N
Inomata, K
机构
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
[2] Japan Sci & Technol Agcy, CREST, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.1103/PhysRevLett.92.167204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Recently, it has been predicted that a spin-polarized electrical current perpendicular to plane directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this Letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.
引用
收藏
页码:167204 / 1
页数:4
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