Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve

被引：84

作者：

Jiang, Y ^{[1
]}

Abe, S

Ochiai, T

Nozaki, T

Hirohata, A

Tezuka, N

Inomata, K

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

[2] Japan Sci & Technol Agcy, CREST, Sendai, Miyagi 9808579, Japan

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.92.167204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recently, it has been predicted that a spin-polarized electrical current perpendicular to plane directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this Letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.

引用

页码：167204 / 1

页数：4

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