Angular dependence of spin-transfer switching in a magnetic nanostructure

被引:72
作者
Mancoff, FB [1 ]
Dave, RW [1 ]
Rizzo, ND [1 ]
Eschrich, TC [1 ]
Engel, BN [1 ]
Tehrani, S [1 ]
机构
[1] Motorola Labs, Phys Sci Res Labs, Chandler, AZ 85224 USA
关键词
D O I
10.1063/1.1604936
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measured switching of a thin film nanomagnet driven by spin-polarized current in giant magnetoresistance spin valves as small as 50 nm x 100 nm. Spin-transfer reversal is observed in both dc current and magnetic field sweeps, with a switching current of similar to5 mA, for example, for a bit with similar to900 Oe switching field in zero current. We studied the dependence of spin-transfer switching on the relative angle phi between the layer magnetizations by using a magnetic field to orient the magnetization of a bulk magnetic layer at an angle to a patterned layer held in place by shape anisotropy. The critical current is a minimum for collinear magnetizations and diverges as 1/\cos phi\ as phi increases to 90degrees, consistent with switching current calculations using the Slonczewski spin-transfer torque model. (C) 2003 American Institute of Physics.
引用
收藏
页码:1596 / 1598
页数:3
相关论文
共 19 条
[1]   Spin-polarized current switching of a Co thin film nanomagnet [J].
Albert, FJ ;
Katine, JA ;
Buhrman, RA ;
Ralph, DC .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3809-3811
[2]   Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids [J].
Bauer, GEW ;
Tserkovnyak, Y ;
Huertas-Hernando, D ;
Brataas, A .
PHYSICAL REVIEW B, 2003, 67 (09)
[3]   GIANT MAGNETORESISTANCE IN SPIN-VALVE MULTILAYERS [J].
DIENY, B .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1994, 136 (03) :335-359
[4]   The science and technology of magnetoresistive tunneling memory [J].
Engel, BN ;
Rizzo, ND ;
Janesky, J ;
Slaughter, JM ;
Dave, R ;
DeHerrera, M ;
Durlam, M ;
Tehrani, S .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) :32-38
[5]   Spin-polarized current induced switching in Co/Cu/Co pillars [J].
Grollier, J ;
Cros, V ;
Hamzic, A ;
George, JM ;
Jaffrès, H ;
Fert, A ;
Faini, G ;
Ben Youssef, J ;
Legall, H .
APPLIED PHYSICS LETTERS, 2001, 78 (23) :3663-3665
[6]   Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars [J].
Katine, JA ;
Albert, FJ ;
Buhrman, RA ;
Myers, EB ;
Ralph, DC .
PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3149-3152
[7]   Spin-current-induced magnetotransport in Co-Cu-Co nanostructures [J].
Mancoff, FB ;
Russek, SE .
IEEE TRANSACTIONS ON MAGNETICS, 2002, 38 (05) :2853-2855
[8]   Current-induced switching of domains in magnetic multilayer devices [J].
Myers, EB ;
Ralph, DC ;
Katine, JA ;
Louie, RN ;
Buhrman, RA .
SCIENCE, 1999, 285 (5429) :867-870
[9]   Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) [J].
Parkin, SSP ;
Roche, KP ;
Samant, MG ;
Rice, PM ;
Beyers, RB ;
Scheuerlein, RE ;
O'Sullivan, EJ ;
Brown, SL ;
Bucchigano, J ;
Abraham, DW ;
Lu, Y ;
Rooks, M ;
Trouilloud, PL ;
Wanner, RA ;
Gallagher, WJ .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5828-5833
[10]   Quantitative studies of spin-momentum-transfer-induced excitations in Co/Cu multilayer films using point-contact spectroscopy [J].
Rippard, WH ;
Pufall, MR ;
Silva, TJ .
APPLIED PHYSICS LETTERS, 2003, 82 (08) :1260-1262