Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

被引：52

作者：

Thiesen, J ^{[1
]}

Iwaniczko, E

Jones, KM

Mahan, A

Crandall, R

机构：

[1] Univ Colorado, Dept Elect Engn, Boulder, CO 80309 USA

[2] Natl Renewable Energy Lab, NREL, Golden, CO USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.124576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate epitaxial silicon growth of 8 A/s at temperatures as low as 195 degrees C, using hot-wire chemical vapor deposition. Characterization by transmission electron microscopy shows epitaxial layers of Si. We briefly discuss various aspects of the process parameter space. Finally, we consider differences in the chemical kinetics of this process when compared to other epitaxial deposition techniques. (C) 1999 American Institute of Physics. [S0003-6951(99)04233-3].

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页码：992 / 994

页数：3

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