Field-effect tuning of carrier density in Nd1.2Ba1.8Cu3Oy thin films

被引：35

作者：

Cassinese, A ^{[1
]}

De Luca, GM ^{[1
]}

Prigiobbo, A ^{[1
]}

Salluzzo, M ^{[1
]}

Vaglio, R ^{[1
]}

机构：

[1] Univ Naples Federico II, Dipartimento Sci Fisiche, INFM, COHERENTIA, Naples, Italy

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1745103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a field effect device we modified the number of holes in the surface layers of 4 to 10 unit cell Nd1.2Ba1.8Cu3Oy (NBCO) epitaxial films grown on (100) SrTiO3 substrates. The results obtained on a set of 12 devices demonstrate that it is possible to induce reversible changes of the hole density of NBCO films by field effect. It is found that the field effect becomes less pronounced increasing the film thickness. Insulating-superconducting transition was observed in one 8 unit cell NBCO field effect device. (C) 2004 American Institute of Physics.

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页码：3933 / 3935

页数：3

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