Deposition of fine silicon carbide relics by electrostatic atomization of a polymeric precursor

被引：14

作者：

Grigoriev, DA ^{[1
]}

Edirisinghe, M ^{[1
]}

Bao, X ^{[1
]}

机构：

[1] Univ London, Queen Mary, Dept Mat, London E1 4NS, England

来源：

JOURNAL OF MATERIALS RESEARCH | 2002年 / 17卷 / 02期

关键词：

D O I：

10.1557/JMR.2002.0068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A solution of a polymeric precursor for silicon carbide (SiC) was subjected to electrostatic atomization in the cone-jet mode to spray droplets on a zirconia substrate. The resulting deposit was heated to 1300 degreesC to obtain SiC relics. Precursor and ceramic relics were characterized by microscopy. The size distribution of the droplet relics was studied at several flow rates of the solution to the electrostatic atomization chamber. The results show that by controlling the flow rate SiC relics approximately 5 mum in diameter can be produced.

引用

页码：487 / 491

页数：5

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