Stacking-Faults-Free Zinc Blende GaAs Nanowires

被引：117

作者：

Shtrikman, Hadas ^{[1
]}

Popovitz-Biro, Ronit ^{[2
]}

Kretinin, Andrey ^{[1
]}

Heiblumf, Moty ^{[1
]}

机构：

[1] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel

[2] Weizmann Inst Sci, Electron Microscopy Unit, IL-76100 Rehovot, Israel

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

关键词：

GROWTH;

D O I：

10.1021/nl8027872

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.

引用

页码：215 / 219

页数：5

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