Influence of growth conditions on the defect formation in SiC ingots

被引：10

作者：

Anikin, M

Chourou, K

Pons, M

Bluet, JM

Madar, R

Grosse, P

Faure, C

Basset, G

Grange, Y

机构：

[1] Inst Natl Polytech Grenoble, UMR 5628 CNRS, LMGP, F-38402 St Martin Dheres, France

[2] Univ Grenoble 1, INPG, UMR 5614 CNRS, LTPCM, F-38402 St Martin Dheres, France

[3] CEA, LETI, Dept Optron, F-38054 Grenoble, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

SiC sublimation growth; growth front flatness; enlargement; low grain boundaries; macrodefects;

D O I：

10.1016/S0921-5107(98)00448-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H-SiC ingots with diameters of 25-35 mm with flat natural surfaces have been grown by the Modified Lely method. Influence of the growth conditions and crucible geometry on the growth front shape and on the enlargement of the seeds have been investigated. The developed growth process allows the growth of ingots under quasi-equilibrium conditions with and without enlargement at a growth rate between 1-1.5 mm h(-1). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：73 / 76

页数：4

共 3 条

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[2]

Anikin MM, 1996, INST PHYS CONF SER, V142, P33

[3] Defects formation in sublimation grown 6H-SiC single crystal boules [J].

Madar, R ;

Anikin, M ;

Chourou, K ;

Labeau, M ;

Pons, M ;

Blanquet, E ;

Dedulle, JM ;

Bernard, C ;

Milita, S ;

Baruchel, J .

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