Temperature gradient controlled SiC crystal growth

被引：36

作者：

Anikin, M ^{[1
]}

Madar, R ^{[1
]}

机构：

[1] ECOLE NATL SUPER PHYS GRENOBLE,F-38402 ST MARTIN DHER,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

6H-SiC crystal growth; sublimation; 'in situ' etching; characterization;

D O I：

10.1016/S0921-5107(96)01993-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H-SiC ingots, 1 in. in diameter have been grown by the modified Lely method with 'in situ' sublimation etching. Nucleation was controlled by the temperature gradient. Pinholes density was in the range of 100-200 cm(-2). It is proposed that the developed method allows to realise step flow growth to decrease pinhole density. (C) 1997 Elsevier Science S.A.

引用

页码：278 / 286

页数：9