Empirical tight-binding band structure of zinc-blende nitrides GaN, AlN, and BN

被引：39

作者：

Ferhat, M

Zaoui, A

Certier, M

Khelifa, B

机构：

[1] LOM, IUT MESURES PHYS, F-57078 METZ, FRANCE

[2] FAC SCI, LPCIA, F-62307 LENS, FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1996年 / 195卷 / 02期

关键词：

D O I：

10.1002/pssb.2221950210

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic band structure and density of states for zinc-blende nitrides GaN, ALN, and BN are reported using an sp(3)s* tight binding method. The large hand gap found for these compounds is analyzed in terms of chemical and volume deformation effects. The calculated ionicity agrees with the Phillips scale and shows a strongly ionic character for GaN and AIN, while BN is found more covalent.

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页码：415 / 424

页数：10

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