Strong broadband optical absorption in silicon nanowire films

被引：238

作者：

Tsakalakos, Loucas ^{[1
]}

Balch, Joleyn ^{[1
]}

Fronheiser, Jody ^{[1
]}

Shih, Min-Yi ^{[1
]}

LeBoeuf, Steven F. ^{[1
]}

Pietrzykowski, Mathew ^{[1
]}

Codella, Peter J. ^{[1
]}

Korevaar, Bas A. ^{[1
]}

Sulima, Oleg ^{[2
]}

Rand, Jim ^{[2
]}

Davuluru, Anilkumar ^{[3
]}

Rapol, Umakant ^{[3
]}

机构：

[1] Gen Elect Global Res Ctr, Niskayuna, NY 12309 USA

[2] GE Energy Solar Technol, Newark, DE 19702 USA

[3] Gen Elect John F Welch Technol Ctr, Bangalore, Karnataka, India

来源：

JOURNAL OF NANOPHOTONICS | 2007年 / 1卷 / 01期

关键词：

silicon; nanowire; optical properties; absorption; reflection; light trapping;

D O I：

10.1117/1.2768999

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found tobe higher than solid thin films of equivalent thickness. The observed behavior is adequately explained by light scattering and light trapping though some of the observed absorption is due to a high density of surface states in the nanowires films, as evidenced by the partial reduction in high residual sub-bandgap absorption after hydrogen passivation. Finite difference time domain simulations show strong resonance within and between the nanowires in a vertically oriented array and describe the experimental absorption data well. These structures may be of interest in optical films and optoelectronic device applications.

引用

页数：10

共 31 条

[1] Nanowire-based dye-sensitized solar cells [J].