XPS study of vanadium surface oxidation by oxygen ion bombardment

被引：106

作者：

Alov, N ^{[1
]}

Kutsko, D

Spirovová, I

Bastl, Z

机构：

[1] MV Lomonosov Moscow State Univ, Dept Analyt Chem, Moscow 119992, Russia

[2] J Heyrovsky Inst Phys Chem, Acad Sci Czech Republ, Lab Electron Spectroscopy, Prague 8, Czech Republic

来源：

SURFACE SCIENCE | 2006年 / 600卷 / 08期

关键词：

vanadium oxide; oxide films; ion-beam oxidation; X-ray photoelectron spectroscopy;

D O I：

10.1016/j.susc.2005.12.052

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

oxidation of vanadium metal surfaces at room temperature by low-energy oxygen ion beams is investigated by X-ray photoelectron spectroscopy (XPS). it is observed that ion-beam irradiation of clean V results in formation of thin oxide layer containing vanadium in oxidation states corresponding to VO, V2O3, VO2 and V2O5 oxides. The composition of the products of ion-beam oxidation depends markedly on oxygen ion fluence. The results of angle-resolved XPS measurements are consistent with a structure of oxide film with the outermost part enriched in V2O5 and VO2 oxides and with V2O3 and VO oxides located in the inner region of the oxide layer. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1628 / 1631

页数：4

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