Cobalt doping in BaTiO3 thin films by two-target pulsed KrF laser ablation with in situ laser annealing

被引：17

作者：

Ito, A ^{[1
]}

Machida, A ^{[1
]}

Obara, M ^{[1
]}

机构：

[1] KEIO UNIV,FAC SCI & TECHNOL,DEPT ELECT & ELECT ENGN,KOHOKU KU,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cobalt doped BaTiO3 thin films have been fabricated using two-target pulsed laser ablation with in situ laser annealing. KrF laser ablated simultaneously both BaTiO3 and Co3O4 sintered targets and the cobalt concentration could simply be controlled at the concentration range of 0.08%-5% by adjusting laser fluences, off-axis deposition angles, and laser-irradiated area for Co ablation. All Co:BaTiO3 films were epitaxially grown on MgO(100) substrate. Optical absorption coefficients were measured at visible region of the spectrum with increasing Co dopant concentrations. (C) 1997 American Institute of Physics.

引用

页码：3338 / 3340

页数：3

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