Hot-atom O2 dissociation and oxide nucleation on Al(111) -: art. no. 176104

被引:73
作者
Ciacchi, LC [1 ]
Payne, MC [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Condensed Matter Theory Grp, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevLett.92.176104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose an atomistic model for the nucleation of aluminum oxide on the Al(111) surface derived from first principles molecular dynamics simulations. The process begins with the dissociative adsorption of O-2 molecules on the metal surface, which occurs via a "hot-atom" mechanism driven by the partial filling of the sigma* antibonding molecular orbital of O-2. During the subsequent hyperthermal motion, O atoms can be spontaneously incorporated underneath the topmost Al surface layer, initiating the nucleation of the oxide far below the saturation coverage of one (1x1) O adlayer.
引用
收藏
页码:176104 / 1
页数:4
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