SURFACE MIGRATION OF HOT ADATOMS IN THE COURSE OF DISSOCIATIVE CHEMISORPTION OF OXYGEN ON AL(111)

被引:294
作者
BRUNE, H [1 ]
WINTTERLIN, J [1 ]
BEHM, RJ [1 ]
ERTL, G [1 ]
机构
[1] UNIV MUNICH,INST KRISTALLOG & MINERAL,W-8000 MUNICH 2,GERMANY
关键词
D O I
10.1103/PhysRevLett.68.624
中图分类号
O4 [物理学];
学科分类号
0702 [物理学];
摘要
Scanning tunneling microscopy observations on an Al(111) surface reveal that O adatoms at 300 K are practically immobile. Low-coverage overlayers formed by dissociative chemisorption of O2 consist essentially only of single isolated atoms rather than of pairs of adjacent atoms. Hence upon dissociation at least part of the chemisorption energy must be transformed into translational energy parallel to the surface which causes the two O atoms formed to separate from each other by at least 80 angstrom before the excess energy is dissipated. The lifetime of these "hot" adatoms is estimated to be on the order of greater-than-or-equal-to 1 ps.
引用
收藏
页码:624 / 626
页数:3
相关论文
共 12 条
[1]
CHEMISORPTION OF OXYGEN ON ALUMINUM SURFACES [J].
BATRA, IP ;
KLEINMAN, L .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1984, 33 (03) :175-241
[2]
BEHM RJ, IN PRESS SURF SCI
[3]
BRUNE HA, IN PRESS
[4]
FEMTOSECOND TIME-RESOLVED MEASUREMENT OF DESORPTION [J].
BUDDE, F ;
HEINZ, TF ;
LOY, MMT ;
MISEWICH, JA ;
DEROUGEMONT, F ;
ZACHARIAS, H .
PHYSICAL REVIEW LETTERS, 1991, 66 (23) :3024-3027
[5]
EGELHOFF WF, 1989, PHYS REV LETT, V62, P733
[6]
DIRECT OBSERVATIONS OF THE SURFACE-DIFFUSION OF ATOMS AND CLUSTERS [J].
EHRLICH, G .
SURFACE SCIENCE, 1991, 246 (1-3) :1-12
[7]
LOW-TEMPERATURE EPITAXIAL-GROWTH OF THIN METAL-FILMS [J].
EVANS, JW ;
SANDERS, DE ;
THIEL, PA ;
DEPRISTO, AE .
PHYSICAL REVIEW B, 1990, 41 (08) :5410-5413
[8]
ORIENTATION DEPENDENCE OF THE HYDROGEN MOLECULES INTERACTION WITH RH(001) [J].
FEIBELMAN, PJ .
PHYSICAL REVIEW LETTERS, 1991, 67 (04) :461-464
[9]
[10]
REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES [J].
KUNKEL, R ;
POELSEMA, B ;
VERHEIJ, LK ;
COMSA, G .
PHYSICAL REVIEW LETTERS, 1990, 65 (06) :733-736