LOW-TEMPERATURE EPITAXIAL-GROWTH OF THIN METAL-FILMS

被引：224

作者：

EVANS, JW

SANDERS, DE

THIEL, PA

DEPRISTO, AE

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT CHEM,AMES,IA 50011

[2] IOWA STATE UNIV SCI & TECHNOL,AMES LAB,AMES,IA 50011

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.41.5410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a different mechanism to explain the occurrence of long-lived oscillations in diffraction spot intensities during epitaxial growth of metal films on fcc (100) substrates at low temperature. Rather than rely on the common picture of cyclical nucleation and growth to produce the oscillations, the model invokes downward funneling deposition dynamics to fourfold-hollow adsorption sites. © 1990 The American Physical Society.

引用

页码：5410 / 5413

页数：4

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