GROWTH-MECHANISM FOR MOLECULAR-BEAM EPITAXY OF GROUP-IV SEMICONDUCTORS

[1] MONOLAYER AND BILAYER GROWTH ON GE(111) AND SI(111) [J]. SURFACE SCIENCE, 1987, 188 (03) : 391 - 401

[2] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[3] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342

[4] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238

[5] INFLUENCE OF SURFACE STEP DENSITY ON REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION SPECULAR INTENSITY DURING EPITAXIAL-GROWTH [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9312 - 9314

[6] ATOMISTIC SIMULATION OF SILICON BEAM DEPOSITION [J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1068 - 1074

[7] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907

[8] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069

[9] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1141 - 1143

[10] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[1] MONOLAYER AND BILAYER GROWTH ON GE(111) AND SI(111) [J]. SURFACE SCIENCE, 1987, 188 (03) : 391 - 401

[2] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[3] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342

[4] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238

[5] INFLUENCE OF SURFACE STEP DENSITY ON REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION SPECULAR INTENSITY DURING EPITAXIAL-GROWTH [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9312 - 9314

[6] ATOMISTIC SIMULATION OF SILICON BEAM DEPOSITION [J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1068 - 1074

[7] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907

[8] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069

[9] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1141 - 1143

[10] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144