OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：98

作者：

ICHIKAWA, M

DOI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1141 / 1143

页数：3

共 17 条

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