EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER

被引:37
作者
CLARKE, S
VVEDENSKY, DD
机构
关键词
D O I
10.1063/1.98434
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:340 / 342
页数:3
相关论文
共 7 条
[1]   ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238
[2]  
CLARKE SJ, UNPUB
[3]   ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J].
GHAISAS, SV ;
MADHUKAR, A .
PHYSICAL REVIEW LETTERS, 1986, 56 (10) :1066-1069
[4]   ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES [J].
JOYCE, BA ;
NEAVE, JH ;
DOBSON, PJ ;
LARSEN, PK .
PHYSICAL REVIEW B, 1984, 29 (02) :814-819
[5]  
JOYCE BA, COMMUNICATION
[6]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].
NEAVE, JH ;
DOBSON, PJ ;
JOYCE, BA ;
ZHANG, J .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102
[7]   ROLE OF NUMERICAL SIMULATIONS IN THE SEMICONDUCTOR HETEROSTRUCTURE TECHNOLOGY USING MOLECULAR-BEAM EPITAXY [J].
SINGH, J ;
BAJAJ, KK .
SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (03) :185-195