SiGe heterojunction bipolar transistor with 213GHz fT at 77K

被引：9

作者：

Zerounian, N

Aniel, F

Adde, R

Gruhle, A

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Daimler Chrysler Res Ctr, D-89081 Ulm, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 12期

关键词：

D O I：

10.1049/el:20000764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Si/Si0.65Ge0.35 abrupt heterojunction bipolar transistor with transit frequencies f(T) of 133 and 213GHz at 300 and 77K, respectively, is reported, The corresponding maximum oscillation frequencies f(max) are 81 and 115GHz. The f(T) of 213GHz is the highest value yet reported for any silicon-based bipolar transistor. A detailed analysis of the intrinsic delay times reveals that the base transit lime plays the dominant role.

引用

页码：1076 / 1078

页数：3