Current-induced organic molecule-silicon bond breaking: consequences for molecular devices

被引:54
作者
Patitsas, SN [1 ]
Lopinski, GP [1 ]
Hul'ko, O [1 ]
Moffatt, DJ [1 ]
Wolkow, RA [1 ]
机构
[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
关键词
chemisorption; desorption induced by electron stimulation; scanning tunneling microscopy; silicon;
D O I
10.1016/S0039-6028(00)00468-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The current carrying capacity of individual organic molecules covalently bound to silicon has been studied. Adsorbates consisting exclusively of saturated C-C bonds were found to be entirely stable whereas adsorbates containing pi bonds could be controllably dislodged under modest conditions. The pi bonds act as a chromophore, taking energy from a scattered electron, energy that can be selectively channeled into Si-C bond breaking. The class of adsorbates that are dislodged is closely related to unsaturated molecules widely investigated for enhanced molecular wire character. It is predicted that molecular devices containing such molecules will fail when operated. Measures to avoid current-induced bond breaking are described. New processes based upon the controlled bond breaking phenomenon are suggested. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L425 / L431
页数:7
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