Electroreflectance of CuInSe2 single crystals

被引:25
作者
Shirakata, S [1 ]
Chichibu, S [1 ]
Isomura, S [1 ]
Nakanishi, K [1 ]
机构
[1] SCI UNIV TOKYO,FAC SCI & TECHNOL,NODA,CHIBA 278,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 5A期
关键词
single crystal of CuInSe2; electroreflectance; chalcopyrite semiconductors; bandgap energy;
D O I
10.1143/JJAP.36.L543
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrolyte electroreflectance (ER) measurements have been carried out at room temperature (297 K) on a series of bulk single crystals of CuInSe2 prepared by the normal freezing method with various Cu/In ratios. The Cu-rich crystals exhibited sharp ER peaks and the AB-transition energy is 1.026 eV, while In-rich crystals exhibited broader ER peaks and smaller AB-transition energies (1.00-1.02 eV) than those of the Cu-rich ones. The spin-orbit splitting of the uppermost valence band is 0.236 eV. The effect of the Cu/In ratio on the ER spectra is discussed in terms of the Urbach energy determined by optical absorption measurement, and the bandgap energy of the stoichiometric CuInSe2 crystal is discussed.
引用
收藏
页码:L543 / L546
页数:4
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