PHOTOREFLECTANCE OF SULFUR-ANNEALED COPPER INDIUM DISULFIDE

被引：26

作者：

HSU, TM ^{[1
]}

LEE, JS ^{[1
]}

HWANG, HL ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 30043,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 01期

关键词：

D O I：

10.1063/1.347128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the energy gaps for sulfur-annealed copper indium disulfide has been studied by photoreflectance in the temperature range of 10-300 K. The sulfur-annealed sample has been found to have larger transition energies, smaller positive temperature coefficients of energy gaps, and larger spin-orbit splitting energy than the as-grown sample. This can be explained by the reduction of d-level contributions in the upper valence band probably caused by the variation of lattice distance due to native defects.

引用

页码：283 / 287

页数：5

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