Thermodynamic considerations in epitaxial growth of GaAs1-xNx solid solutions

被引：41

作者：

Qiu, Y ^{[1
]}

Nikishin, SA ^{[1
]}

Temkin, H ^{[1
]}

Elyukhin, VA ^{[1
]}

Kudriavtsev, YA ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

ALLOYS; LAYERS; GAN;

D O I：

10.1063/1.119016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe epitaxial growth of solid solutions of GaAs1-xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. in addition, our calculations indicate that at room temperature the alloys of GaAs1-xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions. (C) 1997 American Institute of Physics.

引用

页码：2831 / 2833

页数：3

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