Growth-related structural defects in seeded sublimation-grown SiC

被引：18

作者：

Tuominen, M

Yakimova, R

Prieur, E

Ellison, A

Tuomi, T

Vehanen, A

Janzen, E

机构：

[1] OUTOKUMPU SEMITRON AB, S-16111 BROMMA, SWEDEN

[2] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE

[3] HELSINKI UNIV TECHNOL, OPTOELECT LABS, FIN-02150 ESPOO, FINLAND

[4] OKMET LTD, FIN-02631 ESPOO, FINLAND

来源：

关键词：

4H SiC; 6H SiC; sublimation; synchrotron X-ray photography;

D O I：

10.1016/S0925-9635(97)00096-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural defects in 4H and 6H SiC wafers have been studied by means of synchrotron X-ray topography and optical microscopy. The effect of seed crystal attachment, orientation, growth face shape, reloading and continued growth are discussed. A comparison between 4H and 6H material is made also. The results relate the origin of different defects to the mentioned growth conditions. (C) 1997 Elsevier Science S,A.

引用

页码：1272 / 1275

页数：4

共 7 条

[1] 1ST TOPOGRAPHIC RESULTS AT THE EUROPEAN SYNCHROTRON-RADIATION FACILITY [J].

BARUCHEL, J ;

EPELBOIN, Y ;

GASTALDI, J ;

HARTWIG, J ;

KULDA, J ;

REJMANKOVA, P ;

SCHLENKER, M ;

ZONTONE, F .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 141 (01) :59-69

[2] MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS [J].

BAUSER, E ;

STRUNK, HP .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :561-580

[3]

DUDLEY M, 1995, J PHYS D APPL PHYS, V28, pA63

[4] USE OF SYNCHROTRON RADIATION IN X-RAY-DIFFRACTION TOPOGRAPHY [J].

TUOMI, T ;

NAUKKARINEN, K ;

RABE, P .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01) :93-106

[5] CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD [J].

TUOMINEN, M ;

YAKIMOVA, R ;

GLASS, RC ;

TUOMI, T ;

JANZEN, E .

JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :267-276

[6] Defect analysis in Lely-grown 6H SiC [J].

Tuominen, M ;

Prieur, E ;

Yakimova, R ;

Glass, RC ;

Tuomi, T ;

Janzen, E .

JOURNAL OF CRYSTAL GROWTH, 1996, 165 (03) :233-244

[7]

YAKIMOVA R, 1995, EPIGRESS APPL B

← 1 →