MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS

被引：103

作者：

BAUSER, E ^{[1
]}

STRUNK, HP ^{[1
]}

机构：

[1] TECH UNIV HAMBURG, D-2100 HAMBURG 90, FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(84)90368-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：561 / 580

页数：20

共 48 条

[1]

APPEL W, 1984, THESIS STUTTGART

[2] THE FEATHERING OF DOPING STRIATIONS IN SEMICONDUCTOR CRYSTALS [J].

BAUSER, E ;

ROZGONYI, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1782-1785

[3] A LATERAL MICROSCOPIC GROWTH-MODEL FOR HETEROGENEOUS IMPURITY INCORPORATION DURING CZOCHRALSKI CRYSTAL-GROWTH [J].

BAUSER, E ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1001-1003

[4] STEPS ON FACETS OF SOLUTION GROWN GAAS EPITAXIAL LAYERS [J].

BAUSER, E ;

LOCHNER, KS .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :457-464

[5] X-RAY TOPOGRAPHY OF GROWTH STEP SOURCES IN LPE GALLIUM-ARSENIDE [J].

BAUSER, E ;

HAGEN, W .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :771-773

[6] ANALYSIS OF DISLOCATIONS CREATING MONO-MOLECULAR GROWTH STEPS [J].

BAUSER, E ;

STRUNK, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :362-366

[7] DISLOCATIONS AS GROWTH STEP SOURCES IN SOLUTION GROWTH AND THEIR INFLUENCE ON INTERFACE STRUCTURES [J].

BAUSER, E ;

STRUNK, H .

THIN SOLID FILMS, 1982, 93 (1-2) :185-194

[8] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

BAUSER, E ;

FRIK, M ;

LOECHNER, KS ;

SCHMIDT, L ;

ULRICH, R .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153

[9] DEVELOPMENT OF DEPRESSIONS AND VOIDS DURING LPE GROWTH OF GAAS [J].

BAUSER, E .

APPLIED PHYSICS, 1978, 15 (03) :243-252

[10] CRYSTAL-GROWTH FROM THE MELT [J].

BAUSER, E .

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 :141-164

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