THE FEATHERING OF DOPING STRIATIONS IN SEMICONDUCTOR CRYSTALS

被引：16

作者：

BAUSER, E

ROZGONYI, GA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124293

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1782 / 1785

页数：4

共 17 条

[1] A LATERAL MICROSCOPIC GROWTH-MODEL FOR HETEROGENEOUS IMPURITY INCORPORATION DURING CZOCHRALSKI CRYSTAL-GROWTH [J].

BAUSER, E ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1001-1003

[2]

BAUSER E, UNPUB

[3]

BAUSER E, 1978, SEMICONDUCTOR CHARAC, P307

[4]

CARRUTHERS JR, 1977, SEMICONDUCTOR SILICO, P61

[5] DOPANT TRACING OF TERRACE GROWTH IN GAAS LPE LAYERS [J].

FISCHER, B ;

BAUSER, E ;

SULLIVAN, PA ;

RODE, DL .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :78-80

[6] NONRADIATIVE DARK REGIONS ALONG SURFACE RIPPLES IN GAP LPE LAYERS [J].

KAJIMURA, T ;

AIKI, K ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1977, 30 (10) :526-528

[7] QUANTITATIVE-ANALYSIS OF MICROSEGREGATION IN THE FACETED AND NON-FACETED CZOCHRALSKI SILICON CRYSTAL-GROWTH [J].

KIM, KM .

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1980, 35 (01) :80-84

[8] INTERFACE MORPHOLOGICAL INSTABILITY IN CZOCHRALSKI SILICON CRYSTAL-GROWTH FROM HEAVILY SB-DOPED MELT [J].

KIM, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :875-878

[9]

KIM KM, UNPUB J APPL PHYS

[10] LAMELLAR GROWTH PHENOMENA IN (111)-ORIENTED DISLOCATION-FREE FLOAT-ZONED SILICON SINGLE-CRYSTALS [J].

MUHLBAUER, A ;

SIRTL, E .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (02) :555-565

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