QUANTITATIVE-ANALYSIS OF MICROSEGREGATION IN THE FACETED AND NON-FACETED CZOCHRALSKI SILICON CRYSTAL-GROWTH

被引：4

作者：

KIM, KM ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES | 1980年 / 35卷 / 01期

关键词：

D O I：

10.1515/zna-1980-0116

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：80 / 84

页数：5

共 9 条

[1]

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[3] QUANTITATIVE-ANALYSIS OF EFFECTS OF DESTABILIZING VERTICAL THERMAL GRADIENTS ON CRYSTAL-GROWTH AND SEGREGATION - GA-DOPED GE [J].

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[4] INTERFACE MORPHOLOGICAL INSTABILITY IN CZOCHRALSKI SILICON CRYSTAL-GROWTH FROM HEAVILY SB-DOPED MELT [J].

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[5]

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[6] QUANTITATIVE-ANALYSIS OF MICROSEGREGATION IN SILICON GROWN BY CZOCHRALSKI METHOD [J].

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[7] TURBULENT FREE CONVECTION IN CZOCHRALSKI CRYSTAL GROWTH [J].

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[8] EXPERIMENTAL APPROACH TO QUANTITATIVE-DETERMINATION OF DOPANT SEGREGATION DURING CRYSTAL-GROWTH ON A MICROSCALE - GA DOPED GE [J].

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[9] APPLICATION OF INTERFACE DEMARCATION TO STUDY OF FACET GROWTH AND SEGREGATION - GERMANIUM [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :787-790

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