NONRADIATIVE DARK REGIONS ALONG SURFACE RIPPLES IN GAP LPE LAYERS

被引:26
作者
KAJIMURA, T [1 ]
AIKI, K [1 ]
UMEDA, J [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
关键词
D O I
10.1063/1.89221
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:526 / 528
页数:3
相关论文
共 16 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]   SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
BAUSER, E ;
FRIK, M ;
LOECHNER, KS ;
SCHMIDT, L ;
ULRICH, R .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153
[3]  
DONHUE JA, 1970, J CRYST GROWTH, V7, P221
[4]   THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].
DYMENT, JC ;
NASH, FR ;
HWANG, CJ ;
ROZGONYI, GA ;
HARTMAN, RL ;
MARCOS, HM ;
HASZKO, SE .
APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484
[5]  
Frank F.C., GROWTH PERFECTION CR, P411
[6]   CORRESPONDENCE BETWEEN NONRADIATIVE DARK SPOTS, MICROPLASMA EMISSIONS, AND DISLOCATION PITS IN GAP-N LIGHT-EMITTING DIODES [J].
KAJIMURA, T ;
AIKI, K ;
UMEDA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) :1559-1560
[7]  
KOBAYASHI T, 1976, SPR M JAP SOC APPL P
[8]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J].
MATSUSHIMA, Y ;
HIROFUJI, Y ;
GONDA, S ;
MUKAI, S ;
KIMATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) :2321-2325
[9]  
MATTES BL, 1974, J CRYST GROWTH, V27, P133
[10]   TEMPERATURE GRADIENT CELL FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS [J].
MATTES, BL ;
ROUTE, RK .
JOURNAL OF CRYSTAL GROWTH, 1972, 16 (03) :219-222