A LATERAL MICROSCOPIC GROWTH-MODEL FOR HETEROGENEOUS IMPURITY INCORPORATION DURING CZOCHRALSKI CRYSTAL-GROWTH

被引：26

作者：

BAUSER, E

ROZGONYI, GA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1001 / 1003

页数：3

共 17 条

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FRIK, M ;

LOECHNER, KS ;

SCHMIDT, L ;

ULRICH, R .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153

[2]

BAUSER E, 1978, SEMICONDUCTOR CHARAC, V78, P307

[3]

BENNEMA P, 1973, CRYSTAL GROWTH

[4]

DIKHOFF JAM, 1963, PHILIPS TECHN RDSCH, V25, P441

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[6] DOPANT TRACING OF TERRACE GROWTH IN GAAS LPE LAYERS [J].

FISCHER, B ;

BAUSER, E ;

SULLIVAN, PA ;

RODE, DL .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :78-80

[7] NONRADIATIVE DARK REGIONS ALONG SURFACE RIPPLES IN GAP LPE LAYERS [J].

KAJIMURA, T ;

AIKI, K ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1977, 30 (10) :526-528

[8] CRYSTAL-GROWTH FROM MELT UNDER DESTABILIZING THERMAL GRADIENTS [J].

KIM, KM ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1218-&

[9] INTERFACE MORPHOLOGICAL INSTABILITY IN CZOCHRALSKI SILICON CRYSTAL-GROWTH FROM HEAVILY SB-DOPED MELT [J].

KIM, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :875-878

[10] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J].

KUHNKUHNENFELD, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1063-+

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