Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

被引：12

作者：

Buzynin, YN ^{[1
]}

Gusev, SA ^{[1
]}

Danil'tsev, VM ^{[1
]}

Drozdov, MN ^{[1
]}

Drozdov, YN ^{[1
]}

Murel', AV ^{[1
]}

Khrykin, OI ^{[1
]}

Shashkin, VI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microstruct Phys, Nizhni Novgorod, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Growth Rate; GaAs; Comparative Data; Active Defect; Epitaxial Layer;

D O I：

10.1134/1.1262823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conditions for the growth of single-crystalline GaAs, AlGaAs, and InGaAs layers by metalorganic VPE were established and the corresponding semiconductor films were obtained on porous GaAs substrates. Comparative data on the morphology, structure, and electrical homogeneity of the epitaxial layers grown on the porous and monolithic substrates are presented. It was found that passage to the porous substrates leads to changes in the film growth rate and morphology, the concentration of electrically active defects, and their distribution in depth of the epitaxial structures. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：298 / 301

页数：4

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