Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy

被引：44

作者：

Okamoto, A

Yoshida, T

Muramatsu, S

Shibasaki, I

机构：

[1] Asahi Chem Ind Co Ltd, Fuji, Shizuoka 4168501, Japan

[2] Asahikasei Elect Co Ltd, Fuji, Shizuoka 4168501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

InSb; GaAs substrate; Si doping; molecular beam epitaxy (MBE); magnetic sensor; magneto-resistance (MR);

D O I：

10.1016/S0022-0248(98)01466-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The magneto-resistance effect in InSb thin films grown on semi-insulating GaAs (1 0 0) surface using molecular beam epitaxy was studied, along with the effect of Si doping. The temperature dependence of the resistivity in the InSb thin films with high electron mobility decreased significantly when Si was used as a donor impurity. Consequently, InSb thin film grown using MBE can be used as a highly sensitive magneto-resistance element suitable for such applications as magnetic sensing. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：765 / 768

页数：4