A study of hole mobility in diaryldiacetylenes

被引：5

作者：

Vannikov, AV ^{[1
]}

Tameev, AR ^{[1
]}

Maltsev, EI ^{[1
]}

Milburn, GHW ^{[1
]}

Shand, AJ ^{[1
]}

Werninck, AR ^{[1
]}

Wright, J ^{[1
]}

机构：

[1] NAPIER POLYTECH,DEPT APPL CHEM & PHYS SCI,EDINBURGH EH10 5DT,MIDLOTHIAN,SCOTLAND

来源：

SYNTHETIC METALS | 1996年 / 78卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

diaryldiacetylene; mobility;

D O I：

10.1016/0379-6779(95)03571-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin homogeneous films exhibiting effective hole transport with drift mobility values up to 10(-4) cm(2) V-1 s(-1) are formed in the process of vacuum thermal deposition of monomeric diaryldiacetylenes. Basic transport characteristics and their dependence on the electric field, temperature and chemical composition of the monomers are determined.

引用

页码：79 / 83

页数：5

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