Charge Transport Characteristics in Boron-Doped Silicon Nanowires

被引：13

作者：

Ingole, Sarang ^{[1
,2
]}

Manandhar, Pradeep ^{[3
]}

Chikkannanavar, Satishkumar B. ^{[3
]}

Akhadov, Elshan A. ^{[3
]}

Picraux, S. Tom ^{[2
,3
]}

机构：

[1] Purdue Univ, Sch Chem Engn, W Lafayette, IN 47907 USA

[2] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA

[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

基金：

美国国家科学基金会;

关键词：

Depletion layer; nanoelectronics; nanowires (NWs); silicon;

D O I：

10.1109/TED.2008.2005175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the charge transport and inferred surface depletion characteristics of silicon nanowires (Si NWs) with diameters of 90-170 nm after boron doping to 8 x 10(17) and 4 x 10(19) cm(-3) by a proximity diffusion doping technique. Four-probe current-voltage measurements were performed to obtain the NW resistivity, and the electrically active dopant concentration and surface oxide charge density were extracted by varying the NW diameter. The Ti/Au to Si NW contact resistance and specific contact resistivity were also obtained, and specific contact resistivities as low as 2 x 10(-5) Omega.cm(2) were achieved. The derived parameters for these ex situ boron-doped Si NWs agree reasonably well with the expected characteristics and earlier reported results for in situ boron-doped Si NWs. Interface charge creates a surface depletion region in p-type Si NWs, which decreases the conducting area of the NW. This effect increases the NW resistance and becomes increasingly significant with decreasing dopant concentration and NW diameter. A simple method is presented to estimate the relative influence of surface charge density on electrical transport in NWs for this case.

引用

页码：2931 / 2938

页数：8

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