Effect of Te precipitates on the performance of CdZnTe detectors

被引:139
作者
Carini, GA [1 ]
Bolotnikov, AE
Camarda, GS
Wright, GW
James, RB
Li, L
机构
[1] Brookhaven Natl Lab, Dept Nonproliferat & Natl Secur, Upton, NY 11973 USA
[2] Yinnel Tech Inc, South Bend, IN 46619 USA
关键词
D O I
10.1063/1.2189912
中图分类号
O59 [应用物理学];
学科分类号
摘要
Measurements using the National Synchrotron Light Source provided a detailed comparisons of the microscale detector response and infrared microscopy images for CdZnTe Frisch-ring x-ray and gamma detectors. Analysis of the data showed conclusively that local deteriorations of the electron charge collection and x-ray device response fully correlate with the presence of Te precipitates as seen in the IR images. Effects of the surface processing conditions on the detector performance were also clearly observed. (c) 2006 American Institute of Physics.
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页数:3
相关论文
共 8 条
[1]  
BOLOTNIKOV AE, IN PRESS IEEE T NUCL
[2]   Analysis of grain boundaries, twin boundaries and Te precipitates in Cd1-xZnxTe grown by high-pressure Bridgman method [J].
Heffelfinger, JR ;
Medlin, DL ;
James, RB .
SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :33-38
[3]  
Ivanov V, 2004, IEEE NUCL SCI CONF R, P4415
[4]  
James R.B., 1995, SEMICONDUCTORS ROOM, V43, P334
[5]  
JAMES RB, 1998, J ELECT MAT, V28, P234
[6]   Factors affecting energy resolution of coplanar-grid CdZnTe detectors [J].
Luke, PN ;
Amman, M ;
Lee, JS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (03) :1199-1203
[7]   Single-charge-carrier-type sensing with an insulated Frisch ring CdZnTe semiconductor radiation detector [J].
McNeil, WJ ;
McGregor, DS ;
Bolotnikov, AE ;
Wright, GW ;
James, RB .
APPLIED PHYSICS LETTERS, 2004, 84 (11) :1988-1990
[8]   Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe [J].
Szeles, C ;
Eissler, EE .
SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :3-12