Single-charge-carrier-type sensing with an insulated Frisch ring CdZnTe semiconductor radiation detector

被引:92
作者
McNeil, WJ [1 ]
McGregor, DS
Bolotnikov, AE
Wright, GW
James, RB
机构
[1] Kansas State Univ, Dept Mech & Nucl Engn, SMART Lab, Manhattan, KS 66506 USA
[2] Brookhaven Natl Lab, Dept Nonproliferat & Natl Secur, Upton, NY 11973 USA
关键词
D O I
10.1063/1.1668332
中图分类号
O59 [应用物理学];
学科分类号
摘要
Performance optimization of an insulated Frisch ring design was investigated for a 3x3x6 mm CdZnTe planar semiconductor detector. The Frisch ring was composed of copper and was insulated from the detector surface with Teflon. Optimization variables included the Frisch ring length and the bias voltage. Optimized overall device performance was found using a 5 mm long Frisch ring extending from the cathode toward the anode, leaving a 1 mm separation between the Frisch ring and the anode. The best energy resolution observed was 1.7% full width at half maximum at 662 keV with the ring extending 4 mm from the cathode toward the anode. (C) 2004 American Institute of Physics.
引用
收藏
页码:1988 / 1990
页数:3
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